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IXTA2R4N120P IXTP2R4N120P
IXTH2R4N120P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max
TO-220 (IXTP) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 18 Ω (External)
1.2
2.0
1207
57
11.2
22
25
70
32
37
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
6
20
nC
nC
Pins:
1 - Gate
2 - Drain
R thJC
R thCS
(TO-220)
(TO-247)
0.50
0.21
1.0 ° C/W
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
2.4 A
7.2 A
V SD
I F = I S , V GS = 0V, Note 1
1.5 V
TO-247 (IXTH) Outline
t rr
I F = 2.4A, -di/dt = 100A/ μ s,
V R = 100V, V GS = 0V
920
ns
1
2
3
?P
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
Terminals: 1 - Gate 2 - Drain
TO-263 (IXTA) Outline
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
? P
Q
R
S
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
3.55
5.89
4.32
6.15
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
BSC
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.140
0.232
.170
242
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585 7,005,734B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123B1
6,306,728B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692 7,063,975B2
6,771,478B2 7,071,537
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